BYW51G-200 ? august 1998 - ed : 2a high efficiency fast recovery rectifier diodes d 2 pak (plastic) suited for smps very low forward losses negligible switching losses high surge current capability high avalanche energy capability smd package description absolute maximum ratings features dual center tap rectifier suited for switchmode power supply and high frequency dc to dc con- verters. packaged in d 2 pak this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. symbol parameter value unit i f(rms) rms forward current per diode 20 a i f(av) average forward current d = 0.5 tc=120 c per diode 10 a i fsm surge non repetitive forward current tp=10ms sinusoidal per diode 100 a t stg tj storage and junction temperature range - 65 to + 150 - 65 to + 150 c c symbol parameter value unit v rrm repetitive peak reverse voltage 200 v k a2 a1 a1 k a2 1/5
symbol test conditions min. typ. max. unit i r * t j =25 cv r =v rrm 15 m a t j = 100 c 1ma v f** t j = 125 ci f =8a 0.85 v t j = 125 ci f =16a 1.05 t j =25 ci f =16a 1.15 pulse test : * tp = 5 ms, d <2% ** tp = 380 m s, d <2% to evaluate the conduction losses use the following equation : p = 0.65 x i f(av) + 0.025 x i f 2 (rms) symbol test conditions min. typ. max. unit trr t j =25 ci f = 0.5a i r =1a irr = 0.25a 25 ns i f =1a v r = 30v di f /dt = -50a/ m s35 tfr t j =25 ci f =1a v fr = 1.1 x v f tr = 10 ns 15 ns v fp t j =25 ci f = 1a tr = 10 ns 2 v symbol parameter value unit r th (j-c) junction to case per diode 2.5 c/w total 1.4 r th (c) coupling 0.25 c/w when the diodes 1 and 2 are used simultaneously : tj-tc (diode 1) = p(diode 1) x r th(j-c) (per diode) + p(diode 2) x r th(c) thermal resistances static electrical characteristics (per diode) recovery characteristics BYW51G-200 2/5
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 25 50 75 100 125 150 175 200 t i m =tp/t tp i m(a) p=15w p=5w p=10w fig.2 : peak current versus form factor. 0.1 1 10 100 tj=125 c o ifm(a) vfm(v) 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 fig.3 : forward voltage drop versus forward cur- rent (maximum values). 0.1 1.0 0.2 0.5 zth(j-c) (tp. ) k= rth(j-c) =0.5 =0.2 =0.1 singl e pulse tp(s) t =tp/t tp 1.0e-03 1.0e-02 1.0e-01 1.0e+00 k fig.4 : relative variation of thermal impedance junction to case versus pulse duration. 01234567891011121314 0 2 4 6 8 10 12 14 =0.05 =0.1 =0.2 =0.5 t =tp/t tp i f(av)(a) p f(av)(w) =1 fig.1 : average forward power dissipation versus average forward current. 0.001 0.01 0.1 1 0 10 20 30 40 50 60 70 80 90 100 110 120 im t =0.5 t(s) i m(a) tc=25 c o tc= 75 c o tc=120 c o fig.5 : non repetitive surge peak forward current versus overload duration. 0 20406080100120140160 0 1 2 3 4 5 6 7 8 9 10 11 12 t =tp/t tp =0.5 f(av) (a) i o tamb( c) rth(j-a)=15 c/w o rth(j-a)=rth(j-c) fig.6 : average current versus ambient tempera- ture. ( d = 0.5) BYW51G-200 3/5
c(pf) f=1mhz tj=25 c vr(v) o fig.7 : junction capacitance versus reverse volt- age applied (typical values). qrr(nc) if=if(av) dif/dt(a/us) 90% confidence tj=125oc fig.8 : recovery charges versus di f /dt. qrr;irm[tj]/qrr;irm[tj=125 c tj(oc) ] o fig.10 : dynamic parameters versus junction tem- perature. rm(a) i if=if(av) dif/dt(a/us) tj=125oc 90% confidence fig.9 : peak reverse current versus dif/dt. BYW51G-200 4/5
package mechanical data d 2 pak (plastic) marking : type number cooling method : c weight : 1.8 g a c2 d r 2.0 min. flat zone a2 v2 c a1 g l l3 l2 b b2 e ref. dimensions millimeters inches min. typ. max. min. typ. max. a 4.30 4.60 0.169 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.70 0.93 0.027 0.037 b2 1.25 1.40 0.049 0.055 c 0.45 0.60 0.017 0.024 c2 1.21 1.36 0.047 0.054 d 8.95 9.35 0.352 0.368 e 10.00 10.28 0.393 0.405 g 4.88 5.28 0.192 0.208 l 15.00 15.85 0.590 0.624 l2 1.27 1.40 0.050 0.055 l3 1.40 1.75 0.055 0.069 r 0.40 0.016 v2 0 8 0 8 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such informationnor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 1998 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - canada - china - france - germany - italy - japan - korea - malaysia - malta - mexico - morocco - the netherlands singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. foot print (in millimeters) 8.90 3.70 1.30 5.08 16.90 10.30 BYW51G-200 5/5
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